js6666金沙登录入口[中国]精粹研究院|官网

1500V MOS Discretes ◆ Low Rdson;
◆ High Speed Switch;
◆ High UIS;
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RC-IGBT Discretes ◆ IGBT/FWD On the Same Chip;
◆ Low Vcesat;
◆ High Reliability;
◆成本低；
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M3i-GT Low Vcesat IGBT Discretes ◆ Trench & Fieldstop Technology;
◆ Soft Turn On Characteristic,Low di/dt,Low EMI;
◆ Small Tail Current,Soft Turn Off Characteristic;;
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GTU High Speed IGBT Discretes ◆ Trench & Fieldstop Technology;
◆ Soft Turn On Characteristic,Low di/dt,Low EMI;
◆ Low Tf,Low Eoff;
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